发明名称 DIARYLAMINE NOVOLAC RESIN
摘要 <p>[Problem] To provide a novel diarylamine novolac resin, such as phenyl naphthylamine novola resin, and to provide a composition for forming a resist underlayer film for use in a lithography process for a semiconductor device using the above resin. [Solution] A polymer including a structural unit (A) represented by formula (1) (in formula (1), Ar1 and Ar2 represent a benzene ring and a naphthalene ring respectively). A manufacturing method for a semiconductor device, the method including: a step for forming an underlayer film on a semiconductor substrate by means of a composition for forming a resist underlayer film; a step for forming a hard mask on the film; a step for forming a resist film on the hard mask; a step for forming a resist pattern by means of irradiation and development via light or electron beams; a step for etching the hard mask by means of the resist pattern; a step for etching the underlayer film by means of the patterned hard mask; and a step for finishing the semiconductor substrate by means of the patterned underlayer film.</p>
申请公布号 WO2013047516(A1) 申请公布日期 2013.04.04
申请号 WO2012JP74551 申请日期 2012.09.25
申请人 NISSAN CHEMICAL INDUSTRIES, LTD. 发明人 SAKAMOTO, RIKIMARU;SOMEYA, YASUNOBU;HASHIMOTO, KEISUKE;NISHIMAKI, HIROKAZU
分类号 C08G16/02;G03F7/11;H01L21/027 主分类号 C08G16/02
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