发明名称 |
DIARYLAMINE NOVOLAC RESIN |
摘要 |
<p>[Problem] To provide a novel diarylamine novolac resin, such as phenyl naphthylamine novola resin, and to provide a composition for forming a resist underlayer film for use in a lithography process for a semiconductor device using the above resin. [Solution] A polymer including a structural unit (A) represented by formula (1) (in formula (1), Ar1 and Ar2 represent a benzene ring and a naphthalene ring respectively). A manufacturing method for a semiconductor device, the method including: a step for forming an underlayer film on a semiconductor substrate by means of a composition for forming a resist underlayer film; a step for forming a hard mask on the film; a step for forming a resist film on the hard mask; a step for forming a resist pattern by means of irradiation and development via light or electron beams; a step for etching the hard mask by means of the resist pattern; a step for etching the underlayer film by means of the patterned hard mask; and a step for finishing the semiconductor substrate by means of the patterned underlayer film.</p> |
申请公布号 |
WO2013047516(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
WO2012JP74551 |
申请日期 |
2012.09.25 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD. |
发明人 |
SAKAMOTO, RIKIMARU;SOMEYA, YASUNOBU;HASHIMOTO, KEISUKE;NISHIMAKI, HIROKAZU |
分类号 |
C08G16/02;G03F7/11;H01L21/027 |
主分类号 |
C08G16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|