SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to secure a normally-off operation without increasing on-resistance. CONSTITUTION: A semiconductor layer(13) is formed on a substrate(11). A second semiconductor layer(14) is formed on the semiconductor layer. A third semiconductor layer(15) is formed on the second semiconductor layer. A gate electrode(21) is formed on the third semiconductor layer. A source electrode(22) and a drain electrode(23) touch the second semiconductor layer. The third semiconductor layer has a protruding region. [Reference numerals] (AA) Explanation drawing of a semiconductor device in a first embodiment; (BB) Electric intensity;