| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve both reduction in an electric resistance of a second mirror layer and improvement of a reflective index. <P>SOLUTION: In a semiconductor light-emitting element, an n-type lower DBR layer, a resonance part for emitting light by current supply, and a p-type upper DBR layer are sequentially laminated on a semiconductor substrate. On the upper DBR layer, a first semiconductor layer 141 having a first refractive index and a second semiconductor layer 142 having a second refractive index larger than the first refractive index are arranged alternately in a lamination direction while interposing an intermediate layer 143. The intermediate layer 143 and the first semiconductor layer 141 include Al. An Al composition ratio of the intermediate layer 143 increases from a second semiconductor layer 142 side surface toward a first semiconductor layer 141 side surface. An Al composition ratio of the first semiconductor layer 141 increases from an intermediate layer 143B side surface and an intermediate layer 143A side surface toward the center in a thickness direction. <P>COPYRIGHT: (C)2013,JPO&INPIT |
