| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which requires no large scale change and less load of development. <P>SOLUTION: At least one of a ratio (collector contact area/collector active area) and a ratio (p<SP POS="POST">+</SP>region contact area/p<SP POS="POST">+</SP>region area) of an IGBT on High Side is higher than the ratios of an IGBT on Low Side. <P>COPYRIGHT: (C)2013,JPO&INPIT |
