| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride semiconductor laser element using a semipolar plane, which stably supplies a resonator mirror capable of reducing oscillation threshold current. <P>SOLUTION: A group III nitride semiconductor laser element manufacturing method comprises pressing a blade 5g to a first region ER1 with maintaining a state where the first region ER1 is squeezed between a support member H2 and a movable member H1 together with a part included in a protection sheet TF and contacting the first region ER1 until a semipolar principal plane SF at an end face EG1 of the first region ER1 forms a deflection angle THETA with the semipolar principal plane SF in a second region ER2, to increase a tensile force generated at the part included in the protection sheet TF and contacting the first region ER1 by using the movable member H1 in the above-described state thereby to produce a reverse action to a direction in which the blade 5g is pressed to the first region ER1. For example, an angle ALPHA is within a range of 71 degrees-79 degrees and the deflection angle THETA is within a range of 11 degrees-19 degrees. <P>COPYRIGHT: (C)2013,JPO&INPIT |
