| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has a resistive element in which the resistance value can be controlled. <P>SOLUTION: A semiconductor device includes a semiconductor substrate 101, an insulating film 14b, a semiconductor element, and a resistive element 4t. The insulating film 14b covers at least a part of the semiconductor substrate 101. The semiconductor element includes a channel region composed of a part of the semiconductor substrate 101 and an electrode. The resistive element 4t is electrically connected to the electrode so as to be resistance to a current flowing through the electrode and is provided on the semiconductor substrate 101 via the insulating film 14b. The resistive element 4t includes a semiconductor region. By the potential difference between the semiconductor substrate 101 and the resistive element 4t, a depletion layer is generated in the semiconductor region. <P>COPYRIGHT: (C)2013,JPO&INPIT |
