| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride semiconductor laser element using a semi-polar face, which stably supplies a resonator mirror capable of reducing oscillation threshold current. <P>SOLUTION: A group III nitride semiconductor laser element manufacturing method comprises ramping a support plate H at an angle THETA from an m-axis toward a reference plane Ab defined by a pressing direction PR and an a-axis in a c-m plane from a state where the pressing direction PR and a surface Ha of the support plate H are orthogonal to each other, and further, positioning a blade 5g so as to overlap a plane including a crossing part P1 between an extreme scribe mark 5b1 among a plurality of scribe marks 5b and a surface 5a of a substrate product 5 and extending along the pressing direction PR. Because when an angle ALPHA is within either of a range not less than 71 degrees and not more than 79 degrees or a range not less than 101 degrees and not more than 109 degrees, the angle THETA is within a range not less than 11 degrees and not more then 19 degrees, the reference plane Ab extending along the pressing direction PR extends along a c-plane orthogonal to a c-axis. <P>COPYRIGHT: (C)2013,JPO&INPIT |
