| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor including a novel semiconductor material. <P>SOLUTION: The transistor includes an oxide semiconductor layer having a region with the hydrogen concentration lower than or equal to 1×10<SP POS="POST">16</SP>cm<SP POS="POST">-3</SP>, or an oxide semiconductor layer having a region with the carrier density lower than 1×10<SP POS="POST">14</SP>cm<SP POS="POST">-3</SP>. The thickness of the oxide semiconductor layer is less than the maximum width of a depletion layer based on the donor density of the oxide semiconductor layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
