发明名称 ORGANIC FIELD EFFECT TRANSISTOR
摘要 <P>PROBLEM TO BE SOLVED: To stabilize performance of mobility, Von, and hysteresis against a thermal process, a change with time, and an external environment, in an organic field effect transistor including an active layer containing carbon nanotubes. <P>SOLUTION: The organic field effect transistor comprises: a gate electrode; a gate insulating layer; the active layer containing carbon nanotubes; a second insulating layer which is formed on the side opposite to the gate insulating layer with respect to the active layer and contains a polysiloxane having a crosslinked structure; a source electrode; and a drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013062391(A) 申请公布日期 2013.04.04
申请号 JP20110200238 申请日期 2011.09.14
申请人 TORAY IND INC 发明人 IKEDA MAIKO;KANAMORI ONORI;SANADA JUNJI;TSUKAMOTO JUN
分类号 H01L21/336;H01L29/06;H01L29/786;H01L51/05;H01L51/30 主分类号 H01L21/336
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