| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing device capable of enhancing the concentration and partial pressure of a reactant gas in a treatment region. <P>SOLUTION: The substrate processing device is provided with: a gas nozzle for feeding the reactant gas, which is provided in the treatment region, extends to cross the moving direction of the placing region of the substrate and has the discharge port formed along a longitudinal direction; a separation region in which a separation gas for separating the atmospheres of a plurality of treatment regions from each other is supplied and which positions between those treatment regions in the rotating direction of a turntable; a cover member for staying the reactant gas around the gas nozzle; and further a guide face for guiding the separation gas flowing from the upstream side of the rotating direction, from the lower part of a sidewall provided on the upstream side thereof to the upside of the cover member. The interval between the gas nozzle and the sidewall of the upstream side of the rotating direction in the cover member is set so that the reactant gas supplied from the gas nozzle does not infiltrate from the upstream side of the rotating direction to the guide face. <P>COPYRIGHT: (C)2013,JPO&INPIT |
