ORGANIC THIN FILM TRANSISTOR

摘要

The present invention includes: a step of forming a gate electrode (2) on a substrate (1); a step of forming a gate insulating film (3) on the gate electrode; a step of forming a source electrode (4S) and a drain electrode (4D) on the gate insulating film; a step of forming a sacrificial layer (5) on the source electrode and the drain electrode; a step of forming a barrier layer (6R) on the sacrificial layer; a step of forming an opening by exposing a part of the sacrificial layer by patterning the barrier layer; a step of exposing the source electrode and the drain electrode by removing the exposed sacrificial layer; and a step of forming an organic semiconductor layer (7) over the upper surfaces of the source electrode and the drain electrode and the upper surface of the gate insulating film. A total surface area of a source electrode portion and a drain electrode portion exposed from the opening is 50 % or more of an area of the opening, and a gap between the source electrode and the drain electrode is smaller than an average crystal grain diameter of the organic semiconductor layer, at least a part of which is positioned on the source electrode and the drain electrode.