发明名称 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE
摘要 <p>A thin film transistor and manufacturing method thereof, array substrate and liquid crystal display device comprising the thin film transistor, the thin film transistor comprising a gate electrode and a source electrode (9); the gate electrode comprises a first metal layer block (2) and a second metal layer block (3) located above the first metal layer block (2); the thermal expansion coefficient of the second metal layer block (3) is smaller than that of the first metal layer block (2); the upper surface of the first metal layer block (2) is in contact with the lower surface of the second metal layer block (3); and the width of the upper surface of the first metal layer block (2) is consistent with that of the lower surface of the second metal layer block (3). The thin film transistor can inhibit the generation of a hillock while effectively avoiding electricity leakage.</p>
申请公布号 WO2013044528(A1) 申请公布日期 2013.04.04
申请号 WO2011CN80591 申请日期 2011.10.09
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.;CHEN, HSIAOHSIEN 发明人 CHEN, HSIAOHSIEN
分类号 G02F1/1368 主分类号 G02F1/1368
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