| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device that has an electrode structure with high ohmic property and a high reflection ratio, is driven by a low driving voltage, and has excellent light extraction efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer, an n-electrode provided in contact with the n-type semiconductor layer, and a p-electrode provided in contact with the p-type semiconductor layer. The p-electrode includes, on the p-type semiconductor layer, an NiO layer in which at least a part is formed in a mesh shape and an Ag layer formed in contact with the NiO layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
