| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resistance random access nonvolatile storage device which can achieve a low-voltage and high-speed switching operation with low variation. <P>SOLUTION: A resistance random access nonvolatile storage device comprises: a first electrode 14, a resistance change part 18 provided on the first electrode 14; and a second electrode 11 provided on the resistance change part 18. The resistance change part 18 includes a resistance change layer 13 provided on the first electrode 14 in which resistance changes depending on an applied voltage, and a stable layer 12 provided on the resistance change layer 13 for forming a filament. The resistance change layer and the stable layer are composed of metal oxides different from each other. Oxide formation energy of the resistance change layer is higher than oxide formation energy of the stable layer. A film thickness of the resistance change layer 13 has a value such that resistance of the resistance change part 18 in an off-state becomes resistance within a range limited by the film thickness. <P>COPYRIGHT: (C)2013,JPO&INPIT |
