NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LED SYSTEM
摘要
<p>This nitride semiconductor light emitting element has a light emitting layer. The light emitting layer includes an InxGa1-xN well layer (0<x<=1) wherein the main surface thereof is an m plane, an InxGa1-xN well layer profile (depth profile) in the depth direction with an In composition ratio (x) has a plurality of peaks, and the values of the In composition ratio (x) at respective peaks are different from each other.</p>
