SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

Provided are a semiconductor structure and a manufacturing method thereof. The method comprises: providing a semiconductor substrate (100), forming an insulation layer (101) on the semiconductor substrate (100), and forming a semiconductor base on the insulation layer (101); forming a sacrificial layer and a side wall surrounding the sacrificial layer on the semiconductor base, and etching the semiconductor base by using the side wall as a mask to form a semiconductor base body; forming a dielectric film (300) on a side wall of the semiconductor base body; removing the sacrificial layer and the semiconductor base body located under the sacrificial layer, and forming a first semiconductor fin (210) and a second semiconductor fin (220); and forming an inverted doped well structure on side walls (210-1, 220-1) corresponding to the first semiconductor fin (210) and the second semiconductor fin (220).