| 摘要 |
<p>[Problem] To maintain advantages of conventional technologies of an upper portion DC applying system, and to eliminate disadvantages of the upper portion DC applying system. [Solution] In a capacity-coupled plasma processing apparatus of the present invention, first high frequency waves (RFH) that mainly contribute to generating plasma, and second high frequency waves (RFL) that mainly contribute to taking in ions are superimposed and applied to a susceptor (lower electrode) (16). An alternating current (AC) at a constant frequency is applied to an upper electrode (46) from an alternating current power supply (64) via a matching box (66) and a blocking capacitor (68). The alternating current (AC) has a frequency at which ions in the plasma are applicable, and power, a voltage wave height value or an effective value of the alternating current (AC) can be varied in the alternating current power supply (64).</p> |
