发明名称 A TRIMETHYLGALLIUM, A METHOD FOR PRODUCING THE SAME AND A GALLIUM NITRIDE THIN FILM FORMED FROM THE TRIMETHYLGALLIUM
摘要 The present invention provides a trimethylgallium which has less than 0.1 ppm of a total organic silicon compound content; and a method for producing the trimethylgallium comprises hydrolyzing trimethylaluminum as a raw material, extracting organic silicon compound contained with a solvent, quantifying methyltriethylsilane by a Gas Chromatography-Mass Spectrometry, selecting a trimethylaluminum having less than 0.5 ppm of methyltriethylsilane content for the raw material, purifying by distillation, followed by reaction with gallium chloride and then distilling the reactant solution to obtain the trimethylgallium.
申请公布号 KR101250153(B1) 申请公布日期 2013.04.04
申请号 KR20050096398 申请日期 2005.10.13
申请人 发明人
分类号 C01G15/00;C07F5/00;C30B25/02;C30B29/40 主分类号 C01G15/00
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