| 摘要 |
PURPOSE: A single mode high speed modulation surface emitting laser device is provided to minimize capacitor between electrode pads and to be utilized for light source device for short/long distance by executing single mode emission and high speed modulation. CONSTITUTION: A bottom contact layer(23) is composed of a bottom mirror layer and an N-type semiconductor. An active layer(24) is formed into a quantum-well layer in the bottom contact layer. A current insertion layer(25) is composed of a semiconductor in the active layer. A confining layer(26) is composed of the semiconductor in the current insertion layer. A top contact layer is composed of the semiconductor in the confining layer. A top mirror layer is composed of a DBR(Distributed Bragg Reflector) or the semiconductor which is not doped. |
