发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A semiconductor device and a method for manufacturing the same are provided to secure a normally-off operation without increasing on-resistance. CONSTITUTION: A semiconductor layer(13) is formed on a substrate(11). A second semiconductor layer(14) is formed on the semiconductor layer. A third semiconductor layer(15) is formed on the second semiconductor layer. A gate electrode(21) is formed on the third semiconductor layer. A source electrode(22) and a drain electrode(23) are formed on the second semiconductor layer. A passivation film(16) is formed on the third semiconductor layer, the source electrode, and the drain electrode. [Reference numerals] (AA) Structure drawing of a semiconductor device in a first embodiment;
申请公布号 KR20130033956(A) 申请公布日期 2013.04.04
申请号 KR20120098646 申请日期 2012.09.06
申请人 FUJITSU LIMITED 发明人 MINOURA YUICHI
分类号 H01L29/778;H01L21/335 主分类号 H01L29/778
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