摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to secure a normally-off operation without increasing on-resistance. CONSTITUTION: A semiconductor layer(13) is formed on a substrate(11). A second semiconductor layer(14) is formed on the semiconductor layer. A third semiconductor layer(15) is formed on the second semiconductor layer. A gate electrode(21) is formed on the third semiconductor layer. A source electrode(22) and a drain electrode(23) are formed on the second semiconductor layer. A passivation film(16) is formed on the third semiconductor layer, the source electrode, and the drain electrode. [Reference numerals] (AA) Structure drawing of a semiconductor device in a first embodiment; |