| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide technology which easily manufactures a defect-free EUV mask with a high yield simply. <P>SOLUTION: An EUV mask manufacturing method of the present invention includes the steps of: performing defect inspection after depositing a multilayer film on a substrate; determining whether a defect, if any found by the defect inspection, is a concave detect, a convex defect or a mixture of both, and, if the defect is found to be a mixture of concave and convex defects, determining the relative magnitude of the defects; and, thereafter, depositing an additional multilayer film on top of the multilayer film while changing a deposition method according to the determination result. <P>COPYRIGHT: (C)2013,JPO&INPIT |
