| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing agent which can polish an insulating film at high speed with low polishing scratches and has high polishing speed ratio between a silicon oxide film and a stopper film, in CMP technique for flattening the insulating film. <P>SOLUTION: A polishing agent comprises water, particles of a tetravalent metal hydroxide, and an addition agent. The addition agent contains at least one of a cationic polymer and a polysaccharide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
