| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including an oxide semiconductor and a more excellent gate insulating film, also provide a highly reliable and electrically stable semiconductor device having only a small number of changes in the film structure, the process conditions, the manufacturing apparatus, or the like from a mass production technology that has been put into practical use, and further provide a method for manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, and an oxide semiconductor film formed over the gate insulating film. The gate insulating film includes a silicon nitride oxide film, a silicon oxynitride film formed over the silicon nitride oxide film, and a metal oxide film formed over the silicon oxynitride film. The oxide semiconductor film is formed over and in contact with the metal oxide film. <P>COPYRIGHT: (C)2013,JPO&INPIT |
