| 发明名称 |
COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
An HEMT includes, on an SiC substrate, a compound semiconductor layer, a silicon nitride (SiN) protective film having an opening and covering the compound semiconductor layer, and a gate electrode formed on the compound semiconductor layer so as to plug the opening. In the protective film, a projecting portion projecting from a side surface of the opening is formed at a lower layer portion 6a.
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| 申请公布号 |
US2013083568(A1) |
申请公布日期 |
2013.04.04 |
| 申请号 |
US201213555420 |
申请日期 |
2012.07.23 |
| 申请人 |
MAKIYAMA KOZO;OKAMOTO NAOYA;OHKI TOSHIHIRO;MINOURA YUICHI;OZAKI SHIROU;MIYAJIMA TOYOO;FUJITSU LIMITED |
发明人 |
MAKIYAMA KOZO;OKAMOTO NAOYA;OHKI TOSHIHIRO;MINOURA YUICHI;OZAKI SHIROU;MIYAJIMA TOYOO |
| 分类号 |
H01L29/78;H01L21/336;H02M5/458 |
主分类号 |
H01L29/78 |
| 代理机构 |
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