| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a group III-nitride wafer. <P>SOLUTION: The method for growing group III-nitride crystals includes steps of: (a) growing group III-nitride ingots on original seed crystals by an ammonothermal method; (b) slicing wafers out of the ingots; and (c) using wafers taken from the nitrogen-polar side of the original seed crystals as new seed crystals for subsequent growth of ingots by the ammonothermal method. <P>COPYRIGHT: (C)2013,JPO&INPIT |
