发明名称 |
TREATMENT METHOD FOR REDUCING PARTICLES IN DUAL DAMASCENE SILICON NITRIDE PROCESS |
摘要 |
A treatment method for reducing particles in a Dual Damascene Silicon Nitride (DDSN) process, including the following steps: forming a seed layer of copper on a silicon wafer; depositing a deposition layer of copper to cover the seed layer of copper; planarizing the deposition layer of copper; providing the silicon wafer into a reaction chamber and performing a pre-treatment on a surface of the deposition layer of copper using NH3 gas under a plasma condition so as to reduce copper oxide(CuO) to copper(Cu) formed on the deposition layer of copper; in the reaction chamber, generating an etching block layer on the deposition layer of copper using a DDSN deposition process; cleaning the reaction chamber using NF3 gas; and directing N2O gas into the reaction chamber and removing the remaining hydrogen (H) and fluorine (F) in the reaction chamber using the N2O gas under the plasma condition.
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申请公布号 |
US2013084701(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201113339400 |
申请日期 |
2011.12.29 |
申请人 |
GU MEIMEI;HOU DUOYUAN;XU JUN;WANG KE;SHANGHAI HUALI MICROELECTRONICS CORPORATION |
发明人 |
GU MEIMEI;HOU DUOYUAN;XU JUN;WANG KE |
分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
代理机构 |
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