发明名称 |
NICKEL BIS DIAZABUTADIENE PRECURSORS, THEIR SYNTHESIS, AND THEIR USE FOR NICKEL CONTAINING FILM DEPOSITIONS |
摘要 |
<p>Disclosed are homoleptic diazabutadiene nickel precursors used for the vapor deposition of nickel-containing films. The precursors have the general formuia Ni(R-DAD)2, wherein R-DAD stands for substituted 1,4-diazabuta-1,3- diene ligands. The sole presence of the Ni-N bonds was also considered to avoid too high intrusion of other elements, such as carbon, into the nickel-containing films. The flexibility of the Ni-N bond in terms of film deposition also allows using the molecules for nickel, nickel-nitride, nickel-carbonitride, nickel oxide or any other type of nickel-containing films. The nickel-containing film depositions can be carried out by thermal and/or piasma-enhanced CVD, ALD, and pulse CVD or any other type of depositions methods.</p> |
申请公布号 |
WO2013046157(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
WO2012IB55171 |
申请日期 |
2012.09.27 |
申请人 |
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE |
发明人 |
LANSALOT-MATRAS, CLEMENT;GATINEAU, JULIEN;JURCIK, JR., BENJAMIN J. |
分类号 |
C23C16/18;C23C16/455;H01L21/285 |
主分类号 |
C23C16/18 |
代理机构 |
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