| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which is related to a semiconductor device having a local wire and by which reduction in electric characteristics and yield caused by position shift can be suppressed. <P>SOLUTION: A first wire and a second wire arranged adjacent to each other are formed on a semiconductor substrate. A first side wall insulating film is formed on a side wall of the first wire, and a second side wall insulating film is formed on a side wall of the second wire. A conductive film is formed on the semiconductor substrate where the first and second wires and the first and second side wall insulating films are formed. The conductive film on the first and second wires is selectively removed. A third wire formed by the conductive film and separated from the first and second wires by the first and second side wall insulating films is formed in a region between the first wire and the second wire. <P>COPYRIGHT: (C)2013,JPO&INPIT |
