摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of supplying a driving voltage to a high-side driver circuit by a bootstrap capacitor while the high-side driver circuit performs negative bias drive. <P>SOLUTION: In a semiconductor device, a voltage reference circuit 3 generates a reference voltage in a range between a voltage at a high-voltage terminal VB and a voltage at a low voltage terminal VE in a high-side driver circuit 1, and supplies it to a connection point of a high-side switching element Q1 and a low-side switching element Q2. A drain of a switching element Q3 for charging is connected to the low voltage terminal VE in the high-side driver circuit 1, and a source thereof is grounded. <P>COPYRIGHT: (C)2013,JPO&INPIT |