发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To obtain a semiconductor device capable of supplying a driving voltage to a high-side driver circuit by a bootstrap capacitor while the high-side driver circuit performs negative bias drive. <P>SOLUTION: In a semiconductor device, a voltage reference circuit 3 generates a reference voltage in a range between a voltage at a high-voltage terminal VB and a voltage at a low voltage terminal VE in a high-side driver circuit 1, and supplies it to a connection point of a high-side switching element Q1 and a low-side switching element Q2. A drain of a switching element Q3 for charging is connected to the low voltage terminal VE in the high-side driver circuit 1, and a source thereof is grounded. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013062717(A) 申请公布日期 2013.04.04
申请号 JP20110200487 申请日期 2011.09.14
申请人 MITSUBISHI ELECTRIC CORP 发明人 LIANG XIAOGUANG
分类号 H03K17/687;H03K19/0175 主分类号 H03K17/687
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