发明名称 |
3D INTEGRATED ELECTRONIC DEVICE STRUCTURE INCLUDING INCREASED THERMAL DISSIPATION CAPABILITIES |
摘要 |
A microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is phsyically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.
|
申请公布号 |
US2013082376(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201113249492 |
申请日期 |
2011.09.30 |
申请人 |
NAGARKAR KAUSTUBH RAVINDRA;KEIMEL CHRISTOPHER FRED;GENERAL ELECTRIC COMPANY |
发明人 |
NAGARKAR KAUSTUBH RAVINDRA;KEIMEL CHRISTOPHER FRED |
分类号 |
H01L23/34;H01L21/50 |
主分类号 |
H01L23/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|