发明名称 ON-CHIP CAPACITORS AND METHODS OF ASSEMBLING SAME
摘要 An on-chip capacitor a semiconductive substrate is fabricated in a passivation layer that is above the back-end metallization. At least three electrodes are configured in the on-chip capacitor and power and ground vias couple at least two of the at least three electrodes. The first via has a first-coupled configuration to at least one of the first- second- and third electrodes and the second via has a second-coupled configuration to at least one of the first- second- and third electrodes.
申请公布号 WO2013048522(A1) 申请公布日期 2013.04.04
申请号 WO2011US54471 申请日期 2011.10.01
申请人 INTEL CORPORATION;CHILDS, MICHAEL A.;FISCHER, KEVIN J.;NATARAJAN, SANJAY S. 发明人 CHILDS, MICHAEL A.;FISCHER, KEVIN J.;NATARAJAN, SANJAY S.
分类号 H01L23/48;H01L29/00 主分类号 H01L23/48
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