发明名称 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
摘要 <p>Provided are a thin film transistor array substrate and manufacturing method thereof and a display device, the thin film transistor array substrate manufacturing method comprising: obtaining a gate line and a gate electrode (202) on a base substrate (201) via a first-time patterning treatment process; forming a gate insulation layer (203) on the gate line and the gate electrode (202); forming a graphene layer (204) on the gate insulation layer (203), and obtaining a semiconductor active layer (207) above the gate electrode (202) via a second-time patterning treatment process and hydrogen treatment; obtaining a data wire, a source electrode (208), a drain electrode (206) and a pixel electrode (205) on the same layer via a third-time patterning treatment process; forming a protective layer (209) on the data wire, the source electrode (208), the semiconductor active layer (207), the drain electrode (206) and the pixel electrode (205). The thin film transistor array substrate improves the structure of the thin film transistor array substrate, reduces the thickness and simplifies the process.</p>
申请公布号 WO2013044836(A1) 申请公布日期 2013.04.04
申请号 WO2012CN82245 申请日期 2012.09.28
申请人 BOE TECHNOLOGY GROUP CO., LTD. 发明人 DAI, TIANMING;XUE, JIANSHE;YAO, QI;ZHANG, FENG
分类号 H01L21/77;G02F1/1362;G02F1/1368;H01L27/02;H01L29/786 主分类号 H01L21/77
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