| 摘要 |
PURPOSE: A resistive random access memory and a method for manufacturing the same are provided to improve a switching speed by using a thermal barrier effect. CONSTITUTION: A bottom electrode(200) is formed on a substrate. An ion supply layer(300) is formed on the bottom electrode. A resistance changing layer(400) is formed on the ion supply layer. An insulation heater layer is formed on the resistance changing layer. An upper electrode is formed on the insulation heater layer. |
