| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing a nitride semiconductor substrate reducible of a cleavage during slicing of a nitride semiconductor single crystal, and capable of improving a yield ratio of the nitride semiconductor substrate. <P>SOLUTION: The method for producing the nitride semiconductor substrate includes steps of: growing a nitride semiconductor single crystal on a seed crystal substrate by vapor phase epitaxial method; grinding an outer peripheral surface of the grown nitride semiconductor single crystal; and slicing the nitride semiconductor single crystal with its outer peripheral surface ground, wherein a grinding amount of the outer peripheral surface of the nitride semiconductor single crystal in the step of grinding is 1.5 mm or more. <P>COPYRIGHT: (C)2013,JPO&INPIT |
