发明名称 SUBSTRATE PROCESSING APPARATUS AND TEMPERATURE CONTROL METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a temperature control method of the substrate processing apparatus, preventing troubles when controlling heat treatment by using a temperature sensor. <P>SOLUTION: A substrate processing apparatus includes: first temperature detecting means using a first radiation thermometer; and second temperature detecting means for detecting a temperature by using a second radiation thermometer having a temperature measurement range in which an upper limit is higher than an upper limit of a temperature measurement range of the first radiation thermometer and a lower limit is higher than a lower limit of the temperature measurement range of the first radiation thermometer. The apparatus switches to the second temperature detecting means when a temperature detected by the first temperature detecting means exceeds a first threshold value, and switches to the first temperature detecting means when a temperature detected by the second temperature detecting means is lower than a second threshold value lower than the first threshold value, and switches control of heating means on the basis of the temperature detected by the first temperature detecting means or the second temperature detecting means, and the predetermined threshold values. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013062466(A) 申请公布日期 2013.04.04
申请号 JP20110201541 申请日期 2011.09.15
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 YAMAGUCHI HIDETO;SUGISHITA MASASHI
分类号 H01L21/205;C23C16/52;H01L21/22 主分类号 H01L21/205
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