发明名称 |
ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING ELEMENT |
摘要 |
An ultraviolet semiconductor light-emitting element comprises a light-emitting layer which is arranged between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer, an n-electrode that is in contact with the n-type nitride semiconductor layer, and a p-electrode that is in contact with the p-type nitride semiconductor layer. The p-type nitride semiconductor layer is provided with a p-type contact layer that has a band gap smaller than that of the light-emitting layer and is in ohmic contact with the p-electrode. A depressed part is formed in a reverse side surface of a surface of the p-type nitride semiconductor layer that faces the light-emitting layer so as to avoid a formation region on which the p-electrode is formed. A reflective film that reflects ultraviolet light emitted from the light-emitting layer is formed on an inner bottom surface of the depressed part.
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申请公布号 |
US2013082297(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
US201113704679 |
申请日期 |
2011.06.17 |
申请人 |
NOGUCHI NORIMICHI;TSUBAKI KENJI;TAKANO TAKAYOSHI;PANASONIC CORPORATION |
发明人 |
NOGUCHI NORIMICHI;TSUBAKI KENJI;TAKANO TAKAYOSHI |
分类号 |
H01L33/60 |
主分类号 |
H01L33/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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