Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAIC. These initiation layers can be used to deposit TaCx.
申请公布号
WO2012177716(A3)
申请公布日期
2013.04.04
申请号
WO2012US43278
申请日期
2012.06.20
申请人
APPLIED MATERIALS, INC.;GANGULI, SESHADRI;LU, XINLIANG;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH, CHUNG;CHANG, MEI
发明人
GANGULI, SESHADRI;LU, XINLIANG;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH, CHUNG;CHANG, MEI