发明名称 N-METAL FILM DEPOSITION WITH INITIATION LAYER
摘要 Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAIC. These initiation layers can be used to deposit TaCx.
申请公布号 WO2012177716(A3) 申请公布日期 2013.04.04
申请号 WO2012US43278 申请日期 2012.06.20
申请人 APPLIED MATERIALS, INC.;GANGULI, SESHADRI;LU, XINLIANG;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH, CHUNG;CHANG, MEI 发明人 GANGULI, SESHADRI;LU, XINLIANG;NOORI, ATIF;MAHAJANI, MAITREYEE;CHEN, SHIH, CHUNG;CHANG, MEI
分类号 H01L21/31;H01L21/205;H01L21/336;H01L29/78 主分类号 H01L21/31
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