| 摘要 |
A semiconductor device including a first conductive epitaxial layer, a second conductive type first well provided in the first conductive epitaxial layer, a first conductive body provided in the first conductive epitaxial layer, a second conductive type drain extension region provided in the first conductive epitaxial layer and interposed between the first conductive body and the second conductive type first well, a second conductive type second well provided in the second conductive type first well, and a gate provided in the first conductive epitaxial layer. |
