发明名称 CHALCOGENIDE GLASS IONIZING RADIATION SENSOR
摘要 A chalcogenide glass radiation sensor comprising a chalcogenide glass layer coupled to at least two electrodes and a metal source, and a method using the same are disclosed. The chalcogenide glass layer has a resistivity and the at least two electrodes are configured to facilitate the measurement of the resistivity of the chalcogenide glass layer. The coupling of the metal source and the chalcogenide glass layer is such that the resistivity of the chalcogenide glass layer changes upon exposure to ionizing radiation. The metal source is configured to be external to an electric field that may form between the at least two electrodes as the resistivity of the chalcogenide glass layer is measured.
申请公布号 US2013082185(A1) 申请公布日期 2013.04.04
申请号 US201113249106 申请日期 2011.09.29
申请人 MITKOVA MARIA;BUTT DARRYL P.;BOISE STATE UNIVERSITY 发明人 MITKOVA MARIA;BUTT DARRYL P.
分类号 H01L31/0264;G01T1/24;G01T1/26 主分类号 H01L31/0264
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