发明名称 DOUBLE SPACER QUADRUPLE PATTERNING WITH SELF-CONNECTED HOOK-UP
摘要 <p>A photolithographic method for fabricating a pattern which includes a line and a hook-up pad in a semiconductor device, such that the line and the hook-up pad are self-connected to one another by spacer deposition that mitigates a process control issue, and without being misaligned or short circuited. Spacer double patterning lithography can be used. A pattern of sidewall spacer material is formed from a photoresist deposition, conformal spacer material deposition, etching, and removal of the photoresist. A pattern of the sidewall spacer material and a sacrificial layer is formed by performing a further photoresist deposition at a hook-up pad location, a further conformal spacer material deposition, covering part of the sacrificial layer and etching an uncovered part of the sacrificial layer to form a gap. The pattern is transferred to a hard mask layer and then to a wiring layer.</p>
申请公布号 WO2013049354(A1) 申请公布日期 2013.04.04
申请号 WO2012US57566 申请日期 2012.09.27
申请人 SANDISK TECHNOLOGIES, INC.;YOSHIDA, AKIRA;WAKABAYASHI, KAZUYA 发明人 YOSHIDA, AKIRA;WAKABAYASHI, KAZUYA
分类号 H01L21/033;H01L21/3213 主分类号 H01L21/033
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