发明名称 |
DOUBLE SPACER QUADRUPLE PATTERNING WITH SELF-CONNECTED HOOK-UP |
摘要 |
<p>A photolithographic method for fabricating a pattern which includes a line and a hook-up pad in a semiconductor device, such that the line and the hook-up pad are self-connected to one another by spacer deposition that mitigates a process control issue, and without being misaligned or short circuited. Spacer double patterning lithography can be used. A pattern of sidewall spacer material is formed from a photoresist deposition, conformal spacer material deposition, etching, and removal of the photoresist. A pattern of the sidewall spacer material and a sacrificial layer is formed by performing a further photoresist deposition at a hook-up pad location, a further conformal spacer material deposition, covering part of the sacrificial layer and etching an uncovered part of the sacrificial layer to form a gap. The pattern is transferred to a hard mask layer and then to a wiring layer.</p> |
申请公布号 |
WO2013049354(A1) |
申请公布日期 |
2013.04.04 |
申请号 |
WO2012US57566 |
申请日期 |
2012.09.27 |
申请人 |
SANDISK TECHNOLOGIES, INC.;YOSHIDA, AKIRA;WAKABAYASHI, KAZUYA |
发明人 |
YOSHIDA, AKIRA;WAKABAYASHI, KAZUYA |
分类号 |
H01L21/033;H01L21/3213 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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