HEAT TREATMENT METHOD FOR PROMOTING CRYSTALLIZATION OF HIGH DIELECTRIC CONSTANT FILM

摘要

PURPOSE: A heat treatment method is provided to promote a crystallization of a high dielectric layer and to prevent the relaxation of a silicon germanium layer. CONSTITUTION: A silicon germanium layer is formed on a semiconductor wafer(S1). A high dielectric layer is formed on the silicon germanium layer(S2). A gate electrode layer is formed on the high dielectric layer(S3). A semiconductor wafer which forms the high dielectric layer and the gate electrode is inputted to a heat treatment device(S4). The semiconductor wafer is preheated by a halogen lamp(S5). The temperature of the semiconductor wafer is raised by a flash lamp(S6). The temperature of the semiconductor wafer is maintained by the flash lamp(S7). The radiation of the flash lamp is stopped(S8). The radiation of the halogen lamp is stopped(S9). The semiconductor wafer is outputted from the heat treatment device(S10). [Reference numerals] (AA) Start; (BB) End; (S1) Forming a silicon germanium layer; (S10) Outputting the wafer; (S2) Forming a gate insulation layer; (S3) Forming a gate electrode; (S4) Inputting a wafer; (S5) Preheating by a halogen lamp; (S6) Raising the temperature by a flash lamp; (S7) Maintaining the temperature by the flash lamp; (S8) Stopping the radiation of the flash lamp; (S9) Stopping the radiation of the halogen lamp;