发明名称 |
PHOTODIODE AND PHOTODIODE ARRAY |
摘要 |
<p>A p - type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a photosensitive region 21. The photosensitive region 21 is composed of an n + type impurity region 23, a p + type impurity region 25, and a region to be depleted with application of a bias voltage in the p - type semiconductor substrate 20. An irregular asperity 10 is formed in the second principal surface 20b of the p - type semiconductor substrate 20. An accumulation layer 37 is formed on the second principal surface 20b side of the p - type semiconductor substrate 20 and a region in the accumulation layer 37 opposed to the photosensitive region 21 is optically exposed.</p> |
申请公布号 |
EP2403012(A4) |
申请公布日期 |
2013.04.03 |
申请号 |
EP20100746102 |
申请日期 |
2010.02.15 |
申请人 |
HAMAMATSU PHOTONICS K.K. |
发明人 |
YAMAMURA KAZUHISA;SAKAMOTO AKIRA;NAGANO TERUMASA;ISHIKAWA YOSHITAKA;KAWAI SATOSHI |
分类号 |
H01L31/10;H01L27/144;H01L31/0236 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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