Organic field effect transistor and its production method
摘要
<p>An organic field effect transistor (OFET) having a structure of a conductor layer/an insulator layer/a semiconductor layer is provided. This OFET comprises an insulator layer formed by mixing a polymer compound produced by polymerizing or copolymerizing a monomer represented by the formula (1): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ CH 2 =CHCOO-(CH 2 ) 2 -CN€ƒ€ƒ€ƒ€ƒ€ƒ(1) and/or a monomer represented by the formula (2): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ CH 2 =C(CH 3 )COO-(CH 2 ) 2 -CN€ƒ€ƒ€ƒ€ƒ€ƒ(2) with a polymerizable and/or crosslinkable organic compound other than the monomer represented by the formula (1) or (2); and a semiconductor layer comprising an organic compound.</p>
