| 摘要 |
PURPOSE: A nitride semiconductor light emitting device for reducing dislocation density and a manufacturing method thereof are provided to improve luminous efficiency and an electric property by reducing a contact area of a dislocation reducing structure layer and a substrate. CONSTITUTION: A dislocation reducing structure layer(123) is formed on the upper side of a substrate(110) and includes a trunk(121-1), an air gap(125), and a connection cap(123-2) to cover the trunk and the air gap. An n-type nitride layer(130) is formed on the upper side of the dislocation reducing structure layer. An active layer(140) is formed on the upper side of the n-type nitride layer. The active layer is formed with a multiple quantum well structure composed of a quantum barrier layer(141) and a quantum well layer(142). A p-type nitride layer(150) is formed on the upper side of the active layer. |
