Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer,申请号GB20130002640-传众专利搜索

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发明名称	Method, apparatus, and design structure for silicon-on-insulator high-bandwidth circuitry with reduced charge layer
摘要
申请公布号	GB201302640(D0)	申请公布日期	2013.04.03
申请号	GB20130002640	申请日期	2011.07.28
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人
分类号		主分类号
代理机构		代理人
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