| 摘要 |
In a chemically amplified resist composition comprising a base resin, an acid generator, and a solvent, 1,400-5,000 pbw of the solvent is present per 100 pbw of the base resin, and the solvent comprises at least 60 wt% of PGMEA and ethyl lactate, and 0.2-20 wt% of a high-boiling solvent. A resist pattern is formed by coating the resist composition on a substrate, prebaking, patternwise exposure, post-exposure baking, development, and heat treatment. |
