发明名称 |
Compound semiconductor device and method of manufacturing the same |
摘要 |
A HEMT has a compound semiconductor layer, a protection film which has an opening and covers an upper side of the compound semiconductor layer, and a gate electrode which fills the opening and has a shape riding on the compound semiconductor layer, wherein the protection film has a stacked structure of a lower insulating film not containing oxygen and an upper insulating film containing oxygen, and the opening includes a first opening formed in the lower insulating film and a second opening formed in the upper insulating film and wider than the first opening, the first opening and the second opening communicating with each other. |
申请公布号 |
EP2575180(A2) |
申请公布日期 |
2013.04.03 |
申请号 |
EP20120179147 |
申请日期 |
2012.08.03 |
申请人 |
FUJITSU LIMITED |
发明人 |
OHKI, TOSHIHIRO;OKAMOTO, NAOYA;MINOURA, YUICHI;MAKIYAMA, KOZO;OZAKI, SHIROU |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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