MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY DEVICE, SPIN TRANSISTOR, AND INTEGRATED CIRCUIT

摘要

PURPOSE: A magnetic memory element, a magnetic memory device, a spin transistor, and an integrated circuit are provided to write data by using a unidirectional current. CONSTITUTION: A second ferromagnetic layer(20) includes a first band divided into a valence band and a conduction band and a second band which is continuous from the valence band and the conduction band. A nonmagnetic layer(25) is installed between the first ferromagnetic layer and the second ferromagnetic layer. A read operation is performed by making a current flow between the first ferromagnetic layer and the second ferromagnetic layer. A write operation is performed by applying a voltage corresponding to energy below an energy difference from a Fermi level to the valence band to spin-inject an electron of the second band of the second ferromagnetic layer to the first ferromagnetic layer or by applying a voltage corresponding to larger energy than the energy difference to spin-inject an electron of the first band of the second ferromagnetic layer to the first ferromagnetic layer.