| 摘要 |
<p>A semiconductor rectifier includes a first conductivity type wide bandgap semiconductor substrate having a first conductivity type wide bandgap semiconductor layer on an upper surface of which is formed a plurality of first wide bandgap semiconductor regions of the first conductivity type sandwiching a plurality of second wide bandgap semiconductor regions of a second conductivity type, and a plurality of third wide bandgap semiconductor regions of the second conductivity type, at least a part of the third wide bandgap semiconductor regions being connected to the second wide bandgap semiconductor regions and each of the third wide bandgap semiconductor regions having a width smaller than that of the second wide bandgap semiconductor regions. A first electrode is formed on the first and second wide bandgap semiconductor regions and a second electrode is formed on a lower surface of the wide bandgap semiconductor substrate.</p> |
