AN ISOLATION STRUCTURE, AN SEMICONDUCTOR DEVICE COMPRISING THE ISOLATION STRUCTURE, AND METHOD FOR FABRICATING THE ISOLATION STRUCTURE THEREOF

摘要

PURPOSE: An element isolation structure, a semiconductor device including the same, and a method for manufacturing the element isolation structure are provided to reduce a leakage current and prevent a physical defect and a void by suppressing electrical damage to the element isolation structure. CONSTITUTION: A trench is formed on a substrate(100). A first oxide layer(141) is formed on the inner wall and the bottom of the trench. A nitride layer is formed on the first oxide layer. A second oxide layer(142) is formed on the nitride layer. Filing materials(150) are formed on the oxide layer and fill a part of the trench. A fourth oxide layer(160) fills the upper side of the filling materials on the trench to be higher than the upper side of the trench.